Initiation of periodic relief development on the silicon surface under ion irradiation

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The report presents the results of studying the process of a periodic relief nucleation on the silicon surface irradiated with a 30 keV focused beam of gallium ions at ion beam incidence angles θ = 30°, 40° and 50°. It is shown that that the factors initiating the origin of periodic relief are: gallium precipitates in the near-surface silicon layer (θ = 30°), topographic heterogeneity in the form of a hole at the boundary of the bottom and the frontal wall of the sputtering crater (θ = 40° and 50°).

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M. Smirnova

P.G. Demidov Yaroslavl State University

Хат алмасуға жауапты Автор.
Email: vibachurin@mail.ru
Ресей, Yaroslavl

V. Bachurin

P.G. Demidov Yaroslavl State University

Email: vibachurin@mail.ru
Ресей, Yaroslavl

L. Mazaletsky

P.G. Demidov Yaroslavl State University

Email: vibachurin@mail.ru
Ресей, Yaroslavl

D. Pukhov

P.G. Demidov Yaroslavl State University

Email: vibachurin@mail.ru
Ресей, Yaroslavl

A. Churilov

P.G. Demidov Yaroslavl State University

Email: vibachurin@mail.ru
Ресей, Yaroslav

Әдебиет тізімі

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  12. Бачурин В.И., Смирнова М.А., Лобзов К.Н., Лебедев М.Е., Мазалецкий Л.А., Пухов Д.Э., Чурилов А.Б.// Поверхность. Рентген. синхротр. и нейтрон. исслед. 2024. № 7. С. 69. (Bachurin V.I., M.A. Smirnova M.A., Lobzov K.N., Lebedev M.E., Mazaletsky L.A., Pukhov D.E., Churilov A.B. // J. Surf. Invest. 2024. V.18. P. 822. https://doi.org/10.1134/S1027451024700514).
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2. Fig. 1. STEM images of the near-surface region of Si after irradiation with Ga+ ions with an energy of 30 keV. D = 1017 cm–2, θ = 30° (a) and 40° (c), (b) and (d) — Ga distribution profiles by depth for θ = 30° and 40°, respectively.

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3. Fig. 2. Electron microscopic images of cross sections of the outer regions of craters with an ion beam incident at an angle of θ = 40° at fluences of 8 × 1017 (a) and 1018 cm–2 (c), (b) and (d) — their enlarged fragments, respectively.

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4. Fig. 3. Electron microscopic images of cross sections of the outer regions of craters with an ion beam incident at an angle of θ = 50° at fluences of 1.75 × 1018 (a) and 2.5 × 1018 cm–2 (c), (b) and (d) — their enlarged fragments, respectively.

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