| Шығарылым |
Атауы |
Файл |
| Том 54, № 4 (2025) |
Electrical conductivity of a thin polycrystalline film considering various specularity coefficients |
(Rus)
|
|
Kuznetsova I., Romanov D.
|
| Том 54, № 4 (2025) |
Modeling of Self-Assembly of Microinductors Produced Due to Residual Mechanical Stress |
(Rus)
|
|
Babushkin A., Selyukov R.
|
| Том 54, № 3 (2025) |
Features of upsets formation in VLSI under pulsed ionizing radiation |
(Rus)
|
|
Chumakov A.
|
| Том 54, № 1 (2025) |
Calculation of distributions of electron beam energy absorbed in PMMA and Si using various scattering models |
(Rus)
|
|
Rogozhin A., Sidorov F.
|
| Том 54, № 1 (2025) |
Exposure kinetics of a positive photoresist layer on an optically matched substrate |
(Rus)
|
|
Kudrya V.
|
| Том 54, № 1 (2025) |
Influence of boundary conditions on transport in a quantum well |
(Rus)
|
|
Romanov D., Kuznetsova I.
|
| Том 53, № 6 (2024) |
Modeling of Structural Properties and Transport Phenomena in Doped Multicomponent 2D Semiconductors |
(Rus)
|
|
Asadov S., Mustafaeva S., Mammadov A., Lukichev V.
|
| Том 53, № 5 (2024) |
Electron transport and field electron emission mechanisms in 2D noncrystalline hetero structures with quantum barrier |
(Rus)
|
|
Krasnikov G., Bokarev V., Teplov G., Yafarov R.
|
| Том 53, № 5 (2024) |
Mathematical modeling of a microprocessor liquid cooling system |
(Rus)
|
|
Andreev А., Semenov A.
|
| Том 53, № 5 (2024) |
Parameters matching of the thermoelectric system parameters for cooling heat-loaded electronics elements |
(Rus)
|
|
Vasil’ev Е.
|
| Том 53, № 5 (2024) |
Investigation of ways to synthesize concurrent error-detection circuits based on boolean signals correction using uniform separable codes |
(Rus)
|
|
Efanov D., Yelina E.
|
| Том 53, № 4 (2024) |
Approximation of the Absorption Spectrum of Indium Phosphide in the Context of Simulation of the Process of Sensitivity Enhancement |
(Rus)
|
|
Makarenko P., Zolnikov V., Zarevich A., Zalenskaya N., Poluektov A.
|
| Том 53, № 3 (2024) |
Thermal modelling and layout optimization of GaN half-bridge IC with integrated drivers and power HEMTs |
(Rus)
|
|
Kagadey V., Kodorova I., Polyntsev E.
|
| Том 53, № 3 (2024) |
Simulation of silicon conical field effect GAA nanotransistors with stack SiO2/HfO2 dielectric of gate |
(Rus)
|
|
Masalsky N.
|
| Том 53, № 3 (2024) |
Kinetics of electromigration mass transfer in micro- and nanoelectronics interface elements depending on the strength of thin-film junctions |
(Rus)
|
|
Makhviladze T., Sarychev M.
|
| Том 53, № 2 (2024) |
Modeling the diffusion of atoms in multicomponent semiconductors in a disordered state |
(Rus)
|
|
Asadov S.
|
| Том 53, № 2 (2024) |
Application of the finite element method for calculating the surface acoustic wave parameters and devices |
(Rus)
|
|
Koigerov A.
|
| Том 53, № 2 (2024) |
The new approach of a simulation low dose rate radiation effects in bipolar integrated circuits |
(Rus)
|
|
Chumakov A.
|
| Том 53, № 1 (2024) |
Modeling of Physical-Chemical and Electronic Properties of Lithium-Containing 4H—SiC and Binary Phases of the Si—C–Li System |
(Rus)
|
|
Asadov M., Huseynova S., Mustafaeva S., Mammadova S., Lukichev V.
|
| Том 53, № 1 (2024) |
Modeling of the Electronic Properties of M-Doped Supercells (М = Zr, Nb) with a Monoclinic Structure For Lithium-Ion Batteries |
(Rus)
|
|
Asadov M., Mammadova S., Mustafaeva S., Huseynova S., Lukichev V.
|
| Том 52, № 6 (2023) |
Simulation of vertical ballistic quantum-barrier field-effect transistor based on undoped AlxGa1–xAs quantum nanowire |
(Rus)
|
|
Pozdnyakov D., Borzdov A., Borzdov V.
|
| Том 52, № 6 (2023) |
Performance calculation for a MEMS switch with «floating» electrode |
(Rus)
|
|
Morozov M., Uvarov I.
|
| Том 52, № 5 (2023) |
Simulation of the Effect of Lattice Defects on the Work of Separating Joined Materials |
(Rus)
|
|
Makhviladze T., Sarychev M.
|
| Том 52, № 5 (2023) |
A Computer Investigation of the Effect of High-Resistance Layer Inhomogeneities on Resistive Switching in a Bismuth Selenide Microcrystal Structure |
(Rus)
|
|
Sirotkin V.
|
| Том 52, № 4 (2023) |
Simulation of Silicon FETs with a Fully Enclosed Gate with a High-k Gate Dielectric |
(Rus)
|
|
Masalskii N.
|
| Том 52, № 4 (2023) |
Influence of Boundary Conditions on Quantum Magnetotransport in a Thin Film |
(Rus)
|
|
Kuznetsova I., Savenko O., Romanov D.
|
| Том 52, № 3 (2023) |
Design of a Nonlinear Model of a Pseudomorphic 0.15 μm рHEMT AlGaAs/InGaAs/GaAs Transistor |
(Rus)
|
|
Tsunvaza D., Ryzhuk R., Vasil’evskii I., Kargin N., Klokov V.
|
| Том 52, № 3 (2023) |
Simulation of the Adsorption and Diffusion of Lithium Atoms on Defective Graphene for a Li-Ion Battery |
(Rus)
|
|
Asadov M., Mammadova S., Huseynova S., Mustafaeva S., Lukichev V.
|
| Нәтижелер 28 - 1/28 |
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