作者的详细信息
Хамзин, Э. Х.
| 期 | 栏目 | 标题 | 文件 |
| 卷 53, 编号 2 (2024) | ТЕХНОЛОГИИ | Temporary changes in current flow mechanisms in erbium-doped porous silicon |
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关键字
Förster effect
bipolar transistor
charge qubit
etching
fluorine atoms
fluorocarbon gases
gas temperature
kinetics
magnetron sputtering
mechanism
memristor
modeling
molecular beam epitaxy
plasma
polymerization
quantum dot
radiation intensity
reduced electric field strength
resistive switching
silicon
specific power
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卷 54, 编号 1 (2025)
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关键字
Förster effect
bipolar transistor
charge qubit
etching
fluorine atoms
fluorocarbon gases
gas temperature
kinetics
magnetron sputtering
mechanism
memristor
modeling
molecular beam epitaxy
plasma
polymerization
quantum dot
radiation intensity
reduced electric field strength
resistive switching
silicon
specific power
最新一期