Enviar artigo por via de e-mail Influence of the molar ratio Sr:Bi:Ta in bismuth-strontium tantalum films SryBi2+xTa2O9 on structure and electrophysical properties
- Autores: Kiselev D.A.1,2, Kurteva E.A.2, Semchenko A.V.3, Boiko A.A.4, Sudnik L.V.5, Chucheva G.V.1
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Afiliações:
- Kotel’nikov Institute of Radio Engineering and Electronics (Fryazino Branch), Russian Academy of Sciences
- National University of Science and Technology “MISIS”
- F. Skorina Gomel State University
- Sukhoi State Technical University of Gomel
- Powder Metallurgy Institute, Research Institute of Impulse Processes with Pilot Production
- Edição: Volume 88, Nº 5 (2024)
- Páginas: 728-733
- Seção: Physics of ferroelectrics
- URL: https://vietnamjournal.ru/0367-6765/article/view/654677
- DOI: https://doi.org/10.31857/S0367676524050064
- EDN: https://elibrary.ru/OXNQID
- ID: 654677
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Resumo
Polycrystalline thin films of bismuth-strontium tantalum SryBi2+xTa2O9 with different molar ratio Sr:Bi:Ta were obtained by sol-gel method. The formation of a phase with a perovskite structure has been established. Phase transitions have been confirmed by dielectric spectroscopy. In the mode of polarization switching spectroscopy, remnant piezoelectric hysteresis loops were obtained, which confirms the ferroelectric nature of the synthesized SryBi2+xTa2O9 films.
Sobre autores
D. Kiselev
Kotel’nikov Institute of Radio Engineering and Electronics (Fryazino Branch), Russian Academy of Sciences; National University of Science and Technology “MISIS”
Email: gvc@ms.ire.rssi.ru
Rússia, Fryazino, 141190; Moscow, 119049
E. Kurteva
National University of Science and Technology “MISIS”
Email: gvc@ms.ire.rssi.ru
Rússia, Moscow, 119049
A. Semchenko
F. Skorina Gomel State University
Email: gvc@ms.ire.rssi.ru
Belarus, Gomel, 246028
A. Boiko
Sukhoi State Technical University of Gomel
Email: gvc@ms.ire.rssi.ru
Belarus, Gomel, 246746
L. Sudnik
Powder Metallurgy Institute, Research Institute of Impulse Processes with Pilot Production
Email: gvc@ms.ire.rssi.ru
Rússia, Minsk, 220034
G. Chucheva
Kotel’nikov Institute of Radio Engineering and Electronics (Fryazino Branch), Russian Academy of Sciences
Autor responsável pela correspondência
Email: gvc@ms.ire.rssi.ru
Rússia, Fryazino, 141190
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